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| SPICE Device Model 2N7002K Vishay Siliconix N-Channel 60-V (D-S) MOSFET CHARACTERISTICS * N-Channel Vertical DMOS * Macro Model (Subcircuit Model) * Level 3 MOS * Apply for both Linear and Switching Application * Accurate over the -55 to 125C Temperature Range * Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device. SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 73307 S-50261Rev. A, 21-Feb-05 www.vishay.com 1 SPICE Device Model 2N7002K Vishay Siliconix SPECIFICATIONS (TJ = 25C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage On-State Drain Current a Symbol Test Condition Simulated Data 1.6 4 1.1 1.6 240 0.85 Measured Data Unit VGS(th) ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 A VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 200 mA VDS = 10 V, ID = 200 mA IS = 200 mA, VGS = 0 V V A 1.1 1.6 550 0.87 S V Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS = 10 V, VGS = 4.5 V, ID = 250 mA 0.30 0.11 0.15 0.40 0.11 0.15 nC Notes a. Pulse test; pulse width 300 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 73307 S-50261Rev. A, 21-Feb-05 SPICE Device Model 2N7002K Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25C UNLESS OTHERWISE NOTED) Document Number: 73307 S-50261Rev. A, 21-Feb-05 www.vishay.com 3 |
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